Author: Deng, X.
Paper Title Page
WEPTEV012 Characterization of Atomic-Layer-Deposited NbTiN and NbTiN/AlN Films for SIS Multilayer Structures 662
  • Z. Sun, M. Liepe, T.E. Oseroff
    Cornell University (CLASSE), Cornell Laboratory for Accelerator-Based Sciences and Education, Ithaca, New York, USA
  • X. Deng
    University of Virginia, Charlottesville, Virginia, USA
  SIS (superconductor-insulator-superconductor) mul-tilayer structures are proposed designs to repel early flux penetration and ease the impact of defects in SRF cavities. The demonstration of such device physics is strongly affected by the film qualities ’ material struc-ture and composition. Here, we characterized 100 nm NbTiN / 2 nm AlN / bulk Nb SIS structures and investigated the effect of the presence of the AlN layer on the NbTiN film properties. We find that the hcp-structured AlN layer results in a Nb composition gra-dient as a function of film depth, whereas the Nb con-centration remains constant in the NbTiN/Nb samples, which suggests that interface mismatch could induce significant change in NbTiN composition. The surface composition variation further leads to different oxide structures, which might impact the superconducting performance. Our observations indicate that the choice of the insulating layer in SIS structures is critical, and that interface mismatch together with internal strain could deteriorate the superconducting film.  
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About • Received ※ 08 July 2021 — Revised ※ 06 August 2021 — Accepted ※ 22 November 2021 — Issue date ※ 02 January 2022
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