Author: Dobson, K.D.
Paper Title Page
WEOTEV03 Toward Stoichiometric and Low-Surface-Roughness Nb3Sn Thin Films via Direct Electrochemical Deposition 710
  • Z. Sun, G. Gaitan, M. Ge, K. Howard, M. Liepe, T.E. Oseroff, R.D. Porter
    Cornell University (CLASSE), Cornell Laboratory for Accelerator-Based Sciences and Education, Ithaca, New York, USA
  • T. Arias, Z. Baraissov, M.M. Kelley, D.A. Muller, J.P. Sethna, N. Sitaraman
    Cornell University, Ithaca, New York, USA
  • K.D. Dobson
    University of Delaware, Newark, Delaware, USA
  Reducing surface roughness and attaining stoichiometry of Nb3Sn superconducting films are required to push their superheating field to the theoretical limit in SRF cavities. As such, we explore direct electrochemical processes that minimize involving foreign elements to deposit high-quality Sn, Nb, and NbxSn films on Nb and Cu surfaces. These films are then thermally annealed to Nb3Sn. We find that smooth Sn pre-depositions via electroplating on Nb surfaces significantly reduce the average roughness of resultant Nb3Sn to 65 nm, with a dramatic reduction in power intensity at medium special frequencies. Structural and superconducting properties demonstrate a Nb3Sn A15 phase with a stoichiometry of 25 at% Sn. This process is being scaled-up to a 3.9 GHz cavity. Moreover, preliminary results on electroplating on Cu surface show that Nb plating undergoes a slow growth rate while subsequent Sn plating on the plated Nb surface can be controlled with varied thickness. The Nb plating process is currently being optimized.  
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About • Received ※ 09 July 2021 — Revised ※ 09 August 2021 — Accepted ※ 21 August 2021 — Issue date ※ 16 January 2022
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