Author: Oseroff, T.E.
Paper Title Page
TUOFDV07 Sample Test Systems for Next-Gen SRF Surfaces 357
 
  • T.E. Oseroff, M. Liepe, Z. Sun
    Cornell University (CLASSE), Cornell Laboratory for Accelerator-Based Sciences and Education, Ithaca, New York, USA
 
  With the increasing worldwide focus on the development of new surfaces for SRF cavities, exploring alternative materials and multilayer structures, test systems that allow measuring the RF performance of simple sample geometries (e.g., flat samples) become increasingly essential. These systems provide RF performance results that are needed to guide the development of these surfaces. This contribution gives an overview of sample test systems currently available, including the improved Cornell sample host cavity. Recent advances in this important technology, performance specifications, and current limitations are discussed. In addition, an overview is given of interesting recent RF performance results on samples coated with non-niobium bulk and multilayer films.  
DOI • reference for this paper ※ https://doi.org/10.18429/JACoW-SRF2021-TUOFDV07  
About • Received ※ 08 July 2021 — Accepted ※ 21 August 2021 — Issue date; ※ 05 September 2021  
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WEPTEV012 Characterization of Atomic-Layer-Deposited NbTiN and NbTiN/AlN Films for SIS Multilayer Structures 662
 
  • Z. Sun, M. Liepe, T.E. Oseroff
    Cornell University (CLASSE), Cornell Laboratory for Accelerator-Based Sciences and Education, Ithaca, New York, USA
  • X. Deng
    University of Virginia, Charlottesville, Virginia, USA
 
  SIS (superconductor-insulator-superconductor) mul-tilayer structures are proposed designs to repel early flux penetration and ease the impact of defects in SRF cavities. The demonstration of such device physics is strongly affected by the film qualities ’ material struc-ture and composition. Here, we characterized 100 nm NbTiN / 2 nm AlN / bulk Nb SIS structures and investigated the effect of the presence of the AlN layer on the NbTiN film properties. We find that the hcp-structured AlN layer results in a Nb composition gra-dient as a function of film depth, whereas the Nb con-centration remains constant in the NbTiN/Nb samples, which suggests that interface mismatch could induce significant change in NbTiN composition. The surface composition variation further leads to different oxide structures, which might impact the superconducting performance. Our observations indicate that the choice of the insulating layer in SIS structures is critical, and that interface mismatch together with internal strain could deteriorate the superconducting film.  
DOI • reference for this paper ※ https://doi.org/10.18429/JACoW-SRF2021-WEPTEV012  
About • Received ※ 08 July 2021 — Revised ※ 06 August 2021 — Accepted ※ 22 November 2021 — Issue date ※ 02 January 2022
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WEOTEV03 Toward Stoichiometric and Low-Surface-Roughness Nb3Sn Thin Films via Direct Electrochemical Deposition 710
 
  • Z. Sun, G. Gaitan, M. Ge, K. Howard, M. Liepe, T.E. Oseroff, R.D. Porter
    Cornell University (CLASSE), Cornell Laboratory for Accelerator-Based Sciences and Education, Ithaca, New York, USA
  • T. Arias, Z. Baraissov, M.M. Kelley, D.A. Muller, J.P. Sethna, N. Sitaraman
    Cornell University, Ithaca, New York, USA
  • K.D. Dobson
    University of Delaware, Newark, Delaware, USA
 
  Reducing surface roughness and attaining stoichiometry of Nb3Sn superconducting films are required to push their superheating field to the theoretical limit in SRF cavities. As such, we explore direct electrochemical processes that minimize involving foreign elements to deposit high-quality Sn, Nb, and NbxSn films on Nb and Cu surfaces. These films are then thermally annealed to Nb3Sn. We find that smooth Sn pre-depositions via electroplating on Nb surfaces significantly reduce the average roughness of resultant Nb3Sn to 65 nm, with a dramatic reduction in power intensity at medium special frequencies. Structural and superconducting properties demonstrate a Nb3Sn A15 phase with a stoichiometry of 25 at% Sn. This process is being scaled-up to a 3.9 GHz cavity. Moreover, preliminary results on electroplating on Cu surface show that Nb plating undergoes a slow growth rate while subsequent Sn plating on the plated Nb surface can be controlled with varied thickness. The Nb plating process is currently being optimized.  
DOI • reference for this paper ※ https://doi.org/10.18429/JACoW-SRF2021-WEOTEV03  
About • Received ※ 09 July 2021 — Revised ※ 09 August 2021 — Accepted ※ 21 August 2021 — Issue date ※ 16 January 2022
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THPTEV004 Surface Oxides on Nb and Nb3Sn Surfaces: Toward a Deeper Understanding 836
 
  • Z. Sun, M. Liepe, T.E. Oseroff, R.D. Porter
    Cornell University (CLASSE), Cornell Laboratory for Accelerator-Based Sciences and Education, Ithaca, New York, USA
  • T. Arias, Z. Baraissov, D.A. Muller, N. Sitaraman
    Cornell University, Ithaca, New York, USA
  • C. Dukes
    University of Virginia, Charlottesville, Virginia, USA
  • D. Johnson-McDaniel, M. Salim
    CCMR, Ithaca, New York, USA
 
  Surface oxides on Nb and Nb3Sn SRF cavities, as a thin ’dirty’ layer, could be critical to their performance as suggested by recent theory. Although these oxides have been studied in the past, we intend here to provide a deeper understanding based on a systematic study on coupon samples that have been processed under the different conditions currently used in SRF cavity treatments. Our aim is to obtain a more complete picture of the oxide evolution. This then might help to explain the observed cavity performance variation, and might allow designing a process to achieve a designed, optimized surface with controlled oxides types and thickness. We find that the surface oxides are in amorphous phase that exhibits normal conducting behaviors, while the pentoxide further degrades with time. Also, we observed a thin hydroxide layer on the outermost surface and possibly Nb(OH)x motifs in the bulk. Moreover, distinctive oxide structures were found in Nb3Sn samples from vapor diffusion, electroplating, and sputtering. The semiconducting SnOx appeared through the oxide depth in vapor diffused Nb3Sn, while a ~1 nm SnOx layer merely exists at the outermost surface of electroplated Nb3Sn.  
DOI • reference for this paper ※ https://doi.org/10.18429/JACoW-SRF2021-THPTEV004  
About • Received ※ 09 July 2021 — Revised ※ 11 August 2021 — Accepted ※ 21 August 2021 — Issue date ※ 04 November 2021
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